Advanced Planar Stripe

The manufacturer's line of low voltage HEXFET power MOSFETs, targeted at automotive applications, has now been extended. According to the manufacturer, the avalanche capability of these new devices is twice that of previous technology from IR and five times that of industry standard trench technology. An additional benefit is provided by the combination of the new silicon technology with the latest packaging innovations. The "Super" packages allow large amounts of silicon to be put in the same package footprint. This results in a correspondingly low R_DS(on) value, and a good thermal path.

The new devices have been optimized specifically for under-the-hood applications. The 40V devices are made for EPS and the 75V devices are made for ISA. Additionally, highly efficient 55V devices have been developed for ABS, allowing the designer to use small-die devices in the circuit, helping to reduce size and cost. The products also feature the new avalanche rating technique. These new stripe planar devices are now so rugged that avalanche capability can be rated as a purely thermal phenomenon. Designers can now choose a safe operation area for circuits depending on the power MOSFET junction temperature.

International Rectifier, 233 Kansas Street, El Segundo, CA 90245. Tel: 310-252-7105; Fax: 310-252-7171.